RN2107MFV,L3F

Transistors - Bipolar (BJT) - Single, Pre-Biased

Manufacturer No:
RN2107MFV,L3F
Manufacture:
Toshiba Semiconductor and Storage
Package:
SOT-723
Datasheet:
RN2107MFV,L3F
Description:
TRANS PREBIAS NPN

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Product Parameter

Resistor - Emitter Base (R2)
47 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Series
-
Current - Collector Cutoff (Max)
500nA
Packaging
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Part Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Transistor Type
PNP - Pre-Biased
Resistor - Base (R1)
10 kOhms
Supplier Device Package
VESM

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

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