RN2104MFV,L3F
Transistors - Bipolar (BJT) - Single, Pre-Biased
- Manufacturer No:
- RN2104MFV,L3F
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- SOT-723
- Datasheet:
- RN2104MFV,L3F
- Description:
- TRANS PREBIAS PNP 50V 500NA VESM
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Product Parameter
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Transistor Type
- PNP - Pre-Biased
- Resistor - Base (R1)
- 47 kOhms
- Frequency - Transition
- 250MHz
- Supplier Device Package
- VESM
- Resistor - Emitter Base (R2)
- 47 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 5mA
- Series
- -
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Tape & Reel (TR)
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Power - Max
- 150mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Company Profile
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