RN1413(TE85L,F)

Transistors - Bipolar (BJT) - Single, Pre-Biased

Manufacturer No:
RN1413(TE85L,F)
Manufacture:
Toshiba Semiconductor and Storage
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
RN1413(TE85L,F)
Description:
TRANS PREBIAS NPN 0.2W SMINI

In Stock

5675 pcs On sales

$0

Product Parameter

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Resistor - Base (R1)
47 kOhms
Frequency - Transition
250MHz
Supplier Device Package
S-Mini
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Series
-
Current - Collector Cutoff (Max)
100nA (ICBO)
Packaging
Digi-Reel®
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Part Status
Active
Voltage - Collector Emitter Breakdown (Max)
50V
Power - Max
200mW
Mounting Type
Surface Mount

Company Profile

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