RN1311,LF
Transistors - Bipolar (BJT) - Single, Pre-Biased
- Manufacturer No:
- RN1311,LF
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- SC-70, SOT-323
- Datasheet:
- RN1311,LF
- Description:
- X34 PB-F USM TRANSISTOR PD 100MW
In Stock
0 pcs On sales
$0.04
Product Parameter
- Frequency - Transition
- 250MHz
- Supplier Device Package
- USM
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Current - Collector (Ic) (Max)
- 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Series
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Power - Max
- 100mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Transistor Type
- NPN - Pre-Biased
- Resistor - Base (R1)
- 10 kOhms
Company Profile
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