RN1110MFV,L3F
Transistors - Bipolar (BJT) - Single, Pre-Biased
- Manufacturer No:
- RN1110MFV,L3F
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- SOT-723
- Datasheet:
- RN1110MFV,L3F
- Description:
- TRANS PREBIAS NPN 0.15W VESM
In Stock
0 pcs On sales
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Product Parameter
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 5mA
- Current - Collector (Ic) (Max)
- 100mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Series
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V
- Packaging
- Digi-Reel®
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Part Status
- Discontinued at Digi-Key
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Transistor Type
- NPN - Pre-Biased
- Resistor - Base (R1)
- 4.7 kOhms
- Supplier Device Package
- VESM
Company Profile
Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.
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