2SD1221-Y(Q)

Transistors - Bipolar (BJT) - Single

Manufacturer No:
2SD1221-Y(Q)
Manufacture:
Toshiba Semiconductor and Storage
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet:
2SD1221-Y(Q)
Description:
TRANS NPN 60V 3A PW MOLD

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Product Parameter

Part Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
60V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
3MHz
Supplier Device Package
PW-MOLD
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 3A
Current - Collector (Ic) (Max)
3A
Series
-
Current - Collector Cutoff (Max)
100µA (ICBO)
Packaging
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 5V

Company Profile

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