2SB1457(TE6,F,M)

Transistors - Bipolar (BJT) - Single

Manufacturer No:: 2SB1457(TE6,F,M)
Manufacture:: Toshiba Semiconductor and Storage
Package:: TO-226-3, TO-92-3 Long Body
Datasheet:: 2SB1457(TE6,F,M)
Description:: TRANS PNP 2A 100V TO226-3

In Stock

0 pcs On sales

Product Parameter

Packaging: Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V

Part Status: Obsolete

Voltage - Collector Emitter Breakdown (Max): 100V

Power - Max: 900mW

Mounting Type: Through Hole

Package / Case: TO-226-3, TO-92-3 Long Body

Transistor Type: PNP

Operating Temperature: 150°C (TJ)

Frequency - Transition: 50MHz

Supplier Device Package: TO-92MOD

Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A

Current - Collector (Ic) (Max): 2A

Series: -

Current - Collector Cutoff (Max): 10µA (ICBO)

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