RJP65T54DPM-E0#T2

Transistors - IGBTs - Single

Manufacturer No:: RJP65T54DPM-E0#T2
Manufacture:: Renesas Electronics America
Package:: TO-3PFM, SC-93-3
Datasheet:: RJP65T54DPM-E0#T2
Description:: IGBT TRENCH TO-3FP

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Product Parameter

Switching Energy: 330µJ (on), 760µJ (off)

Td (on/off) @ 25°C: 35ns/120ns

Operating Temperature: 175°C (TJ)

Series: -

Supplier Device Package: TO-3PF

IGBT Type: Trench

Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A

Input Type: Standard

Current - Collector (Ic) (Max): 60A

Gate Charge: 72nC

Current - Collector Pulsed (Icm): 225A

Part Status: Obsolete

Voltage - Collector Emitter Breakdown (Max): 650V

Power - Max: 63.5W

Mounting Type: Through Hole

Package / Case: TO-3PFM, SC-93-3

Test Condition: 400V, 30A, 10Ohm, 15V

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