GA20JT12-247

Transistors - FETs, MOSFETs - Single

Manufacturer No:
GA20JT12-247
Manufacture:
GeneSiC Semiconductor
Package:
TO-247-3
Datasheet:
GA20JT12-247
Description:
TRANS SJT 1.2KV 20A

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Product Parameter

Rds On (Max) @ Id, Vgs
70mOhm @ 20A
Series
-
Power Dissipation (Max)
282W (Tc)
FET Type
-
Supplier Device Package
TO-247AB
Packaging
Tube
Drain to Source Voltage (Vdss)
1200V
Vgs (Max)
-
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Technology
SiC (Silicon Carbide Junction Transistor)
Drive Voltage (Max Rds On, Min Rds On)
-
FET Feature
-
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
-
Operating Temperature
175°C (TJ)

Company Profile

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