GA10JT12-263

Transistors - FETs, MOSFETs - Single

Manufacturer No:: GA10JT12-263
Manufacture:: GeneSiC Semiconductor
Package:: -
Datasheet:: GA10JT12-263
Description:: TRANS SJT 1200V 25A

In Stock

721 pcs On sales

$19.24

Product Parameter

Operating Temperature: 175°C (TJ)

Rds On (Max) @ Id, Vgs: 120mOhm @ 10A

Series: -

Power Dissipation (Max): 170W (Tc)

FET Type: -

Supplier Device Package: -

Packaging: Tube

Drain to Source Voltage (Vdss): 1200V

Vgs (Max): -

Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V

Technology: SiC (Silicon Carbide Junction Transistor)

Current - Continuous Drain (Id) @ 25°C: 25A (Tc)

FET Feature: -

Drive Voltage (Max Rds On, Min Rds On): -

Part Status: Active

Mounting Type: Surface Mount

Package / Case: -

Vgs(th) (Max) @ Id: -

Company Profile

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