GA10JT12-247

Transistors - FETs, MOSFETs - Single

Manufacturer No:: GA10JT12-247
Manufacture:: GeneSiC Semiconductor
Package:: TO-247-3
Datasheet:: GA10JT12-247
Description:: TRANS SJT 1.2KV 10A

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Product Parameter

Part Status: Obsolete

Mounting Type: Through Hole

Package / Case: TO-247-3

Vgs(th) (Max) @ Id: -

Operating Temperature: 175°C (TJ)

Rds On (Max) @ Id, Vgs: 140mOhm @ 10A

Series: -

Power Dissipation (Max): 170W (Tc)

FET Type: -

Supplier Device Package: TO-247AB

Packaging: Tube

Drain to Source Voltage (Vdss): 1200V

Vgs (Max): -

Current - Continuous Drain (Id) @ 25°C: 10A (Tc)

Technology: SiC (Silicon Carbide Junction Transistor)

Drive Voltage (Max Rds On, Min Rds On): -

FET Feature: -

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