EPC2212

Transistors - FETs, MOSFETs - Single

Manufacturer No:
EPC2212
Manufacture:
EPC
Package:
Die
Datasheet:
EPC2212
Description:
AEC-Q101 GAN FET 100V 13.5 MOHM

In Stock

6311 pcs On sales

$0

Product Parameter

Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
5V
Mounting Type
Surface Mount
Package / Case
Die
Vgs(th) (Max) @ Id
2.5V @ 3mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
13.5mOhm @ 11A, 5V
Series
eGaN®
Power Dissipation (Max)
-
FET Type
N-Channel
Supplier Device Package
Die
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
4nC @ 5V
Vgs (Max)
+6V, -4V
Drain to Source Voltage (Vdss)
100V
Technology
GaNFET (Gallium Nitride)
Input Capacitance (Ciss) (Max) @ Vds
407pF @ 50V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
18A (Ta)

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

EPC2212 Relevant information

EPC2001
EPC2001

GANFET TRANS 100V 25A BUMPED DIE

EPC2001C
EPC2001C

GANFET TRANS 100V 36A BUMPED DIE

EPC2007
EPC2007

GANFET TRANS 100V 6A BUMPED DIE

EPC2007C
EPC2007C

GANFET TRANS 100V 6A BUMPED DIE

EPC2010
EPC2010

GANFET TRANS 200V 12A BUMPED DIE

EPC2010C
EPC2010C

GANFET TRANS 200V 22A BUMPED DIE