EPC2106ENGRT

Transistors - FETs, MOSFETs - Arrays

Manufacturer No:
EPC2106ENGRT
Manufacture:
EPC
Package:
Die
Datasheet:
EPC2106ENGRT
Description:
GAN TRANS 2N-CH 100V BUMPED DIE

In Stock

9587 pcs On sales

$0

Product Parameter

Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
70mOhm @ 2A, 5V
Supplier Device Package
Die
Series
eGaN®
Gate Charge (Qg) (Max) @ Vgs
0.73nC @ 5V
FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
100V
Packaging
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 50V
FET Feature
GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C
1.7A
Part Status
Active
Power - Max
-
Mounting Type
Surface Mount
Package / Case
Die
Vgs(th) (Max) @ Id
2.5V @ 600µA

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

EPC2106ENGRT Relevant information

EPC2001
EPC2001

GANFET TRANS 100V 25A BUMPED DIE

EPC2001C
EPC2001C

GANFET TRANS 100V 36A BUMPED DIE

EPC2007
EPC2007

GANFET TRANS 100V 6A BUMPED DIE

EPC2007C
EPC2007C

GANFET TRANS 100V 6A BUMPED DIE

EPC2010
EPC2010

GANFET TRANS 200V 12A BUMPED DIE

EPC2010C
EPC2010C

GANFET TRANS 200V 22A BUMPED DIE