EPC2102ENG

Transistors - FETs, MOSFETs - Arrays

Manufacturer No:
EPC2102ENG
Manufacture:
EPC
Package:
Die
Datasheet:
EPC2102ENG
Description:
GAN TRANS 2N-CH 60V BUMPED DIE

In Stock

0 pcs On sales

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Product Parameter

Package / Case
Die
Vgs(th) (Max) @ Id
2.5V @ 7mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4.4mOhm @ 20A, 5V
Supplier Device Package
Die
Series
eGaN®
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 5V
FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
60V
Packaging
Tray
Input Capacitance (Ciss) (Max) @ Vds
830pF @ 30V
FET Feature
GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C
23A
Part Status
Discontinued at Digi-Key
Power - Max
-
Mounting Type
Surface Mount

Company Profile

Atlaschip is a globally authorized distributor of semiconductors and electronic components ,IC ,COF/ TAB ,Opencell for over 600 industry-leading manufacturer brands. a key resource for design engineers. We are guides innovation forward for the global leading technology manufacturers and service providers.

EPC2102ENG Relevant information

EPC2001
EPC2001

GANFET TRANS 100V 25A BUMPED DIE

EPC2001C
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GANFET TRANS 100V 36A BUMPED DIE

EPC2007
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GANFET TRANS 100V 6A BUMPED DIE

EPC2007C
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GANFET TRANS 100V 6A BUMPED DIE

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GANFET TRANS 200V 12A BUMPED DIE

EPC2010C
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